Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- Automotive
- Switching Voltage Regulators
- DC-DC Converters
- Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.0 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TO-220SM(W)
1: Gate 2: Drain (Heatsink) 3: Source
©2016-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-04
2020-06-24 Rev.6.0
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