Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- - Lithium-Ion Secondary Batteries Power Management Switches
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA)
3. Packaging and Internal Circuit
5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain
VS-8
4....