Datasheet4U Logo Datasheet4U.com

TPN1600ANH - MOSFETs

Datasheet Summary

Features

  • (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-so.

📥 Download Datasheet

Datasheet preview – TPN1600ANH

Datasheet Details

Part number TPN1600ANH
Manufacturer Toshiba
File Size 229.31 KB
Description MOSFETs
Datasheet download datasheet TPN1600ANH Datasheet
Additional preview pages of the TPN1600ANH datasheet.

📁 Similar Datasheet

  • TPN3021 - TRIPOLAR OVERVOLTAGE PROTECTION (STMicroelectronics)
  • TPNA0505S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA0509S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA0512S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA0515S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA1205S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA1209S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA1212S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA1215S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA1505S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TPN1600ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1600ANH 1. Applications • • • DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Published: |