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TRS30N120HB - SiC Schottky Barrier Diode

Key Features

  • (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ. ) (3) Low total capacitive charge: Qc (Per Leg) = 80 nC (typ. ) (4) Low reverse current: IR (Per Leg) = 1.4 µA (typ. ) 3. Packaging and Internal Circuit TRS30N120HB TO-247 1: Anode 2: Cathode (heatsink) 3: Anode ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-07 2024-06-12 Rev.1.0 TRS30N120HB 4. Absolute Maximum Ratings (Note) (Unless otherwise specified,.

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Datasheet Details

Part number TRS30N120HB
Manufacturer Toshiba
File Size 438.70 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS30N120HB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode TRS30N120HB 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 80 nC (typ.) (4) Low reverse current: IR (Per Leg) = 1.4 µA (typ.) 3. Packaging and Internal Circuit TRS30N120HB TO-247 1: Anode 2: Cathode (heatsink) 3: Anode ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-07 2024-06-12 Rev.1.0 TRS30N120HB 4.