TRS30N120HB - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS30N120HB
Manufacturer	Toshiba
File Size	438.70 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS30N120HB Datasheet
Additional preview pages of the TRS30N120HB datasheet.

(1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ. ) (3) Low total capacitive charge: Qc (Per Leg) = 80 nC (typ. ) (4) Low reverse current: IR (Per Leg) = 1.4 µA (typ. ) 3. Packaging and Internal Circuit TRS30N120HB TO-247 1: Anode 2: Cathode (heatsink) 3: Anode ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-07 2024-06-12 Rev.1.0 TRS30N120HB 4. Absolute Maximum Ratings (Note) (Unless otherwise specified,.

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Published: Feb 28, 2025 |