Datasheet4U Logo Datasheet4U.com

TRS6A65F - SiC Schottky Barrier Diode

Features

  • (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 pF (typ. ) (4) Low reverse current: IR = 0.3 µA (typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS6A65F TO-220F-2L 1: Cathode 2: Anode ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-11 2020-09-28 Rev.5.0 TRS6A65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T.

📥 Download Datasheet

Datasheet Details

Part number TRS6A65F
Manufacturer Toshiba
File Size 269.64 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS6A65F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TRS6-xxxxxRxxx Thermal Reed Switch NEC
TRS6707 STRS6707 Allegro
TRS-12VDC-SB-L15 Relay TTi
TRS-24VDC-SB-L15 Relay TTi
TRS-32100-CXX0G CWDM 5V / 155 Mbps RoHS Compliant Optical Single-Mode Transceiver Optoway Technology

Other Datasheets by Toshiba

Part Number Description
TRS6E65F SiC Schottky Barrier Diode
TRS6E65H SiC Schottky Barrier Diode
TRS6V65H SiC Schottky Barrier Diode
TRS10A65C SiC Schottky Barrier Diode
TRS10A65F SiC Schottky Barrier Diode

Full PDF Text Transcription

Click to expand full text
SiC Schottky Barrier Diode TRS6A65F 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 pF (typ.) (4) Low reverse current: IR = 0.3 µA (typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS6A65F TO-220F-2L 1: Cathode 2: Anode ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-11 2020-09-28 Rev.5.0 TRS6A65F 4.
Published: |