TRS6A65F
TRS6A65F is SiC Schottky Barrier Diode manufactured by Toshiba.
Si C Schottky Barrier Diode
1. Applications
- Power Factor Correction
- Solar Inverters
- Uninterruptible Power Supplies
- DC-DC Converters
2. Features
(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 p F (typ.) (4) Low reverse current: IR = 0.3 µA (typ.) (5) Isolation package: TO-220F-2L
3. Packaging and Internal Circuit
TO-220F-2L
1: Cathode 2: Anode
©2016-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-11
2020-09-28 Rev.5.0
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