TRS6E65H
TRS6E65H is SiC Schottky Barrier Diode manufactured by Toshiba.
Si C Schottky Barrier Diode
1. Applications
- Power Factor Correction
- Solar Inverters
- Uninterruptible Power Supplies
- DC-DC Converters
2. Features
(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 17 n C (typ.) (4) Low reverse current: IR = 1.1 µA (typ.)
3. Packaging and Internal Circuit
TO-220-2L
1: Cathode 2: Anode
©2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-05
2023-04-11 Rev.1.0
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