TRS6E65F
TRS6E65F is SiC Schottky Barrier Diode manufactured by Toshiba.
Si C Schottky Barrier Diode
1. Applications
- Power Factor Correction
- Solar Inverters
- Uninterruptible Power Supplies
- DC-DC Converters
2. Features
(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 55A (Max) (3) The junction capacitance is small : Cj = 22 p F (Typ.) (4) The reverse current is small. : IR = 0.3 µA (Typ.)
3. Packaging and Internal Circuit
TO-220-2L
1: Cathode 2: Anode
©2016-2018 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-07
2018-06-27 Rev.2.0
4....
