1SS384 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z posed of 2 independent diodes. VF (2) = 0.23V (typ.) @IF = 5mA 1SS384 Unit: Using continuously under heavy loads (e.g.
- Part: 1SS384
- Manufacturer: Toshiba (official site)
- Size: 199.62 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 1SS381 | Silicon Epitaxial Planar Type diode |
| 1SS382 | Silicon diode |
| 1SS383 | Silicon diode |
| 1SS385 | Silicon diode |
| 1SS385F | Diode |