2SC3673 Description
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm High DC current gain : hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage.
2SC3673 is Silicon NPN Transistor manufactured by Toshiba .
| Part Number | Description |
|---|---|
| 2SC3670 | Silicon NPN Transistor |
| 2SC3671 | Silicon NPN Transistor |
| 2SC3672 | Silicon NPN Transistor |
| 2SC3605 | Silicon NPN Epitaxial Planar Type Transistor |
| 2SC3606 | Silicon NPN Transistor |
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm High DC current gain : hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage.