2SJ338 Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application l High breakdown voltage l High forward transfer admittance l plementary to 2SK2162 : |Yfs| = 0.7 S (typ.) 2SJ338 Unit: Please use devices on condition that the channel temperature is below 150°C.
2SJ338 Key Features
- High breakdown voltage
- High forward transfer admittance
- plementary to 2SK2162 : VDSS = −180 V : |Yfs| = 0.7 S (typ.) 2SJ338 Unit: mm Maximum Ratings (Ta = 25°C) C