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MT3S111 Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications.

MT3S111 Key Features

  • Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz)
  • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz)