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MT3S111P Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications.

MT3S111P Key Features

  • Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz)
  • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)