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MT3S111TU Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application.

MT3S111TU Key Features

  • Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz)
  • High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz)