Download MT3S113P Datasheet PDF
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MT3S113P Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit:.

MT3S113P Key Features

  • Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
  • High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz)