TPCF8003 Description
TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCF8003 Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.) （VGS= 4.5V） Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode:.