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TC2696 - 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

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Datasheet Details

Part number TC2696
Manufacturer Transcom
File Size 57.13 KB
Description 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Datasheet download datasheet TC2696 Datasheet

General Description

The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Overview

TRANSCOM TC2696 Preliminary 2 W Flange Ceramic Packaged PHEMT GaAs Power.

Key Features

  • 2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High Reliability.

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