Transcom TC2696
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET.| Part No. | TC2696 |
|---|---|
| Datasheet | TC2696 Download |
| Manufacturer |  Transcom |
| Description | 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs |
| Buy | Stock & Price |
FEATURES
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● 2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 18 V Lg = 0.6 µm, Wg = 5 mm 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT January 2002
DESCRIPTION
All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier.ELECTRICAL SPECIFICATIONS
(TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 2.45GHz VDS = 8 V, IDS = 600 mA Linear Power Gain, f = 2.45GHz VDS = 8 V, IDS = 600 mA Intercept Point of the 3rd-order Intermodulation, f = 2.45GHz VDS = 8 V, IDS = 600 mA, *PSCL = 20 dBm Power Added Efficiency at 1dB Comp...