TC2696 - 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

Product Overview

Transcom

Part number	TC2696
Manufacturer	Transcom
File Size	57.13 KB
Description	2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Datasheet	TC2696 Datasheet
Additional preview pages of the TC2696 datasheet.

The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High Reliability.

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Published: Mar 3, 2006 |