TPH3212PS Datasheet | Transphorm

Description The TPH3212PS 650V, 72mΩ Gallium Nitride (Ga N) FET is a normally-off device. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. Transphorm Ga N offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature - AN0009: Remended External Circuitry for Ga N FETs - AN0003: Printed Circuit Board Layout and Probing - AN0010: Paralleling Ga N FETs Ordering Information Part Number Package 3 lead TO-220 Package Configuration Source TPH3212PS TO-220 (top view) GS D Cascode Schematic Symbol November 22, 2017 tph3212p.13 Cascode Device Structure Features - JEDEC qualified Ga N technology - Dynamic RDS(on)eff production tested - Robust design, defined by - Intrinsic lifetime tests - Wide gate safety margin - Transient...