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TPH3212PS - 650V GaN FET

Description

The TPH3212PS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient over-vo.

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Datasheet Details

Part number TPH3212PS
Manufacturer Transphorm
File Size 1.45 MB
Description 650V GaN FET
Datasheet download datasheet TPH3212PS Datasheet

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Full PDF Text Transcription

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TPH3212PS 650V GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies— offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TPH3212PS 3 lead TO-220 Package Configuration Source TPH3212PS TO-220 (top view) S GS D Cascode Schematic Symbol November 22, 2017 tph3212p.
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