TGA2573 Datasheet | TriQuint Semiconductor

2-18 GHz 10 Watt Ga N Amplifier Applications - Military Radar - munications - Electronic warfare - Electronic counter measures - Test Equipment Product Features - Frequency Range: 2 - 18 GHz - Psat: 40.0 d Bm at Vd=30 V - PAE: 25% typical - Small Signal Gain: 9 d B - Return Loss: 15 d B - Bias: Vd = 30 V, Idq = 500 m A, Vg = -3.4 V typical - Technology: 0.25 µm Ga N on Si C - Dimensions: 2.55 x 5.54 x 0.1 mm General Description Tri Quint’s TGA2573 is a wideband, high power Ga N HEMT amplifier fabricated on Tri Quint’s production 0.25um Ga N on Si C process. Operating from 2 to 18 GHz, it achieves 40 d Bm saturated output power, 25% PAE and 9 d B small signal gain at a drain bias of 30 volts. Fully matched to 50 ohms and with integrated DC blocking caps on both RF ports, the TGA2573 is ideally suited to support both mercial and defense related applications. The TGA2573 is 100% DC and RF tested on-wafer to ensure pliance to performance specifications. Lead-free and Ro HS pliant Functional Block Diagram Vg 4 RF In 1 RF 3 Out Vd Bond Pad Configuration Bond Pad...