Datasheet4U Logo Datasheet4U.com

TGA2573 Datasheet 2-18 Ghz 10 Watt Gan Amplifier

Manufacturer: TriQuint Semiconductor

Overview: TGA2573 2-18 GHz 10 Watt GaN Amplifier Applications • Military Radar • Communications • Electronic warfare • Electronic counter measures • Test.

Datasheet Details

Part number TGA2573
Manufacturer TriQuint Semiconductor
File Size 568.33 KB
Description 2-18 GHz 10 Watt GaN Amplifier
Datasheet TGA2573-TriQuintSemiconductor.pdf

General Description

TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts.

Fully matched to 50 ohms and with integrated DC blocking caps on both RF ports, the TGA2573 is ideally suited to support both commercial and defense related applications.

Key Features

  • Frequency Range: 2.
  • 18 GHz.
  • Psat: 40.0 dBm at Vd=30 V.
  • PAE: 25% typical.
  • Small Signal Gain: 9 dB.
  • Return Loss: 15 dB.
  • Bias: Vd = 30 V, Idq = 500 mA, Vg = -3.4 V typical.
  • Technology: 0.25 µm GaN on SiC.
  • Dimensions: 2.55 x 5.54 x 0.1 mm General.

More Datasheets from TriQuint Semiconductor

Part Number Description
TGA2575 Ka-Band 4 Watt Power Amplifier
TGA2575-TS Ka-Band 3 Watt Power Amplifier
TGA2576-2-FL GaN Power Amplifier
TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier
TGA2576-FS GaN Power Amplifier
TGA2578 30W Power Amplifier
TGA2578-CP 30W GaN Power Amplifier
TGA2579-2-FL 20W Ku-Band GaN Power Amplifier
TGA2579-FL 25 Watt Ku-Band GaN Power Amplifier
TGA2501 Power Amplifier

TGA2573 Distributor