TriQuint Semiconductor TGA2575-TS
TGA2575-TS is a wideband power amplifier fabricated on TriQuint’s production-released 0.15um pwr-pHEMT process. The TGA2575-TS is a 2 mil thick GaAs die mounted on a 10 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling.| Part No. | TGA2575-TS |
|---|---|
| Datasheet | TGA2575-TS Download |
| Manufacturer |  TriQuint Semiconductor |
| Description | Ka-Band 3 Watt Power Amplifier |
| Buy | Stock & Price |
APPLICATIONS
● Military Radar● Communications Product
FEATURES
● Frequency Range: 32.0 – 38.0 GHz● Power: 35.5 dBm Psat
● PAE: 22%
● Gain: 19 dB
● Return Loss: 12 dB
● Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical
● Dimensions: 5.31 x 8.92 x 0.49 mm Functional Block Diagram C5 100 pF 6 TGA2575-TS C3 1000 pF 5 C1 1000 pF 14 C6 100 pF C4 1000 pF 2 C2 1000 pF 3
GENERAL DESCRIPTION
Bond Pad Configuration TriQuint’s Operating from 32 GHz to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band. Pin # 1 2, 6 3, 5 4 Symbol RF In Vg Vd RF Out Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575-TS is ideally suited to support both commercial and defense related opportunities. The TGA2575-TS is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant Data Sheet: Rev - 12/14/12 © 2012 TriQuint Semiconductor, Inc. Ordering Information Part No.
