TGA2575-TS Description
Bond Pad Configuration TriQuint’s TGA2575-TS is a wideband power amplifier fabricated on TriQuint’s production-released 0.15um pwr-pHEMT process. Operating from 32 GHz to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band. The TGA2575-TS is a 2 mil thick GaAs die mounted on a 10 mil thick CuMoCu carrier.
TGA2575-TS Key Features
- Frequency Range: 32.0
- 38.0 GHz
- Power: 35.5 dBm Psat
- PAE: 22%
- Gain: 19 dB
- Return Loss: 12 dB
- Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical
- Dimensions: 5.31 x 8.92 x 0.49 mm
- 12/14/12 © 2012 TriQuint Semiconductor, Inc
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