TSP32N20M - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSP32N20M
Manufacturer	Truesemi
File Size	834.36 KB
Description	N-Channel MOSFET
Datasheet	TSP32N20M Datasheet
Additional preview pages of the TSP32N20M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

32A,200V,Max. RDS(on)=0.085 Ω @ VGS =10V.
Low gate charge(typical 85nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalan.

📁 Similar Datasheet

TSP320A - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP320B - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP320C - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP320SA - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP320SB - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP320SC - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
TSP3-BF3216-P1Q2 - Super Blue LED (TAITRON)
TSP310A - LOW CAPACITANCE THYRISTOR (FCI)

Other Datasheets by Truesemi

Published: Apr 12, 2017 |