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TSP3N80N - N-Channel MOSFET

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Truesemi

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TSP3N80N N-Channel MOSFET by Truesemi - Datasheet Preview — Datasheet preview – TSP3N80N

Datasheet Details

Part number	TSP3N80N
Manufacturer	Truesemi
File Size	257.19 KB
Description	N-Channel MOSFET
Datasheet	TSP3N80N Datasheet
Additional preview pages of the TSP3N80N datasheet.

Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V.
Low gate charge ( typical 15nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sour.

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Published: Apr 12, 2017 |