TSP3N80M
TSP3N80M is N-Channel MOSFET manufactured by Truesemi.
Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V
- Low gate charge ( typical 14n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-220
GD S
TO-220F
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- G◀▲
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- {S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current
- Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed...
