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XP151A13A0MR - Power MOS FET

General Description

The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

Key Features

  • Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) Rds (on) = 0.15Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 1.5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 N - Channel MOS FET ( 1 device built-in ) Pin Assignment PIN NUMBER 1 2 3 PIN NAME G S D.

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Datasheet Details

Part number XP151A13A0MR
Manufacturer Tuofeng Semiconductor
File Size 84.44 KB
Description Power MOS FET
Datasheet download datasheet XP151A13A0MR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) Rds (on) = 0.15Ω ( Vgs = 2.