MA4E2501-1290 Description
and Applications The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The bination of silicon and glass allows.
MA4E2501-1290 Key Features
- Extremely Low Parasitic Capitance and Inductance
- Extremely Small 0201 (600x300um) Footprint
- Surface Mountable in Microwave Circuits, No Wirebonds Required
- Rugged HMIC Construction with Polyimide Scratch Protection
- Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours)
- Lower Susceptibility to ESD Damage