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MA4E2501-1290 - SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

General Description

The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Key Features

  • Extremely Low Parasitic Capitance and Inductance.
  • Extremely Small 0201 (600x300um) Footprint.
  • Surface Mountable in Microwave Circuits, No Wirebonds Required.
  • Rugged HMIC Construction with Polyimide Scratch Protection.
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours).
  • Lower Susceptibility to ESD Damage MA4E2501-1290 Series V1 The MA4E2501L-1290 SurMount Low Barrier Schottky diodes are rec.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 (600x300um) Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) • Lower Susceptibility to ESD Damage MA4E2501-1290 Series V1 The MA4E2501L-1290 SurMount Low Barrier Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters.