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MA4E2508 - SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes

General Description

The MA4E2508 SurMount™ Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Key Features

  • Extremely Low Parasitic Capitance and Inductance.
  • Surface Mountable in Microwave Circuits, No Wirebonds Required.
  • Rugged HMIC Construction with Polyimide Scratch Protection.
  • Reliable, Multilayer Metalization with a Diffusion.
  • Barrier, 100% Stabilization Bake (300°C, 16 hours).
  • Lower Susceptibility to ESD Damage MA4E2508 Series V2 The MA4E2508 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band f.

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SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion • Barrier, 100% Stabilization Bake (300°C, 16 hours) • Lower Susceptibility to ESD Damage MA4E2508 Series V2 The MA4E2508 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters.