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MA4E2532M-1113 - SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

This page provides the datasheet information for the MA4E2532M-1113, a member of the MA4E2532L-1113 SURMOUNT Low & Medium Barrier Silicon Schottky Diodes family.

Datasheet Summary

Description

The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Features

  • Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1113 A B.

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Datasheet preview – MA4E2532M-1113

Datasheet Details

Part number MA4E2532M-1113
Manufacturer Tyco Electronics
File Size 137.97 KB
Description SURMOUNT Low & Medium Barrier Silicon Schottky Diodes
Datasheet download datasheet MA4E2532M-1113 Datasheet
Additional preview pages of the MA4E2532M-1113 datasheet.

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Full PDF Text Transcription

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SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.00 MA4E2532L-1113 MA4E2532M-1113 Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1113 A B Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.
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