MA4E2532M-1113 Datasheet | Tyco Electronics

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.00 MA4E2532L-1113 MA4E2532M-1113 Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1113 Description The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon...