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PE5E4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID 31A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±25
Continuous Drain Current3 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
31 19 90
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
10 8
Avalanche Current
IAS 22
Avalanche Energy
L =0.1mH
EAS
24
TC = 25 °C
18
Power Dissipation
TC = 100 °C TA = 25 °C
PD
7 1.7
TA = 70 °C
1.
PE5E4BA Datasheet
