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PE5E4BA - MOSFET

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Datasheet Details

Part number PE5E4BA
Manufacturer UNIKC
File Size 798.73 KB
Description MOSFET
Datasheet download datasheet PE5E4BA Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE5E4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.5mΩ @VGS = 10V ID 31A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±25 Continuous Drain Current3 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 31 19 90 Continuous Drain Current TA = 25 °C TA = 70 °C ID 10 8 Avalanche Current IAS 22 Avalanche Energy L =0.1mH EAS 24 TC = 25 °C 18 Power Dissipation TC = 100 °C TA = 25 °C PD 7 1.7 TA = 70 °C 1.