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PE5E6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 39A
PDFN 3X3P
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current4 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
39 25 100
Continuous Drain Current4
TA = 25 °C TA = 70 °C
ID
16 13
Avalanche Current
IAS 33
Avalanche Energy
L =0.1mH
EAS
54
Power Dissipation Power Dissipation3
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
PD
17.
PE5E6BA Datasheet
