Unisonic Technologies 10N70T
10N70T is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 10N70T |
|---|---|
| Datasheet | 10N70T Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 1.2Ω @ VGS = 10V, ID = 5A * Fast switching * 100% avalanche tested * Improved dv/dt capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N70TL-TF3-T 10N70TG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-877.b 10N70T Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 700 V ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 10 A 10 A 40 A 55 mJ 15.6 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 50 W TJ +150 °C Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
