10N75 Datasheet PDF | Unisonic Technologies

Unisonic Technologies 10N75

10N75 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.

Part No.	10N75
Datasheet	10N75 Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL POWER MOSFET
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DESCRIPTION

The UTC The UTC 10N75 is universally applied in high efficiency switch mode power supply, active power faction correction, electronic lamp based on half bridge topology. Power MOSFET 1 TO-220 1 TO-220F 1 TO-220F1

FEATURES

* RDS(on)=1.3Ω @VGS=10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N75L-TA3-T 10N75G-TA3-T 10N75L-TF3-T 10N75G-TF3-T 10N75L-TF1-T 10N75G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-220F1 S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-501.b 10N75 Preliminary Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 750 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 10 A 40 A Avalanche Current (Note 2) IAR 10...