Unisonic Technologies UT2311
P-Channel MOSFET
| Part No. | UT2311 |
|---|---|
| Datasheet | UT2311 Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
* Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process Power MOSFET● SYMBOL
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 123456 Packing UT2311L-AE2-R UT2311G-AE2-R SOT-23-3 G S D - - - Tape Reel UT2311L-AE3-R UT2311G-AE3-R SOT-23 G S D - - - Tape Reel UT2311L-K06B-2020-R UT2311G-K06B-2020-R DFN2020-6B D D G S D D Tape Reel Note: Pin Assignment: G: Gate S: Source D: Drain Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-365.G UT2311
● MARKING SOT-23-3 / SOT-23 Power MOSFET DFN2020-6B UNISONIC TECHNOLOGIES CO., LTD 2 of 5 QW-R502-365.G UT2311 Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID -4 A Pulsed Drain Current IDM -20 A SOT-23-3 1 W Power Dissipation (TA=25°C) (Note 2) SOT-23 PD 1.25 W DFN2020-6B 1.67 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
