11N60K-MT Datasheet | Unisonic Technologies

UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET - DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and mutation mode. The UTC 11N60K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. - Features - RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A - Fast Switching - With 100% Avalanche Tested - SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source - ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N60KL-TF2-T 11N60KG-TF2-T TO-220F2 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GD S Packing Tube - MARKING .unisonic..tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6...