50N06-F Description
The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.
50N06-F Key Features
- RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A
- Fast switching capability
- 100% avalanche energy specified
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION
- MARKING