50N06-F Datasheet | Specifications & PDF Download

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avala

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www.DataSheet4U.com STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V

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www.DataSheet4U.com SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc

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sales.Mr.wang13826508770 www.sztssd.com Description AP50N06D 60V N-Channel Enhancement Mode MOSFET The AP50N06D uses advanced trench technology to

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SLB150N06T SLB150N06T 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanc

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SLM150N06G SLM150N06G 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technol

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RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

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N-Channel Trench Power MOSFET General Description The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extr

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G050N06LL N-Channel Enhancement Mode Power MOSFET Description The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate

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SLP150N06G SLP150N06G 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technolo

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low

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FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is p

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CMB50N06/CMP50N06 N-Channel 60V 45A Power MOSFET General Description Product Summery The 50N06 is extremely high-density N-channel MOSFET, which p

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50N06 * '6 72  Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.

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50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% aval

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N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS IC 50 A VCES 650V Vcesat-ty（p Vge=15V） 1.6V Package  UPS  APPLICATIONS  General

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Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typic

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MOSFET – Power, N-Channel 60 V, 50 A, 22 mW RFP50N06 These N−Channel power MOSFETs are manufactured using the MegaFET process. This process, which u

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