CHA6194-QXG Datasheet PDF - United Monolithic Semiconductors 37-40GHz Power Amplifier Specs

CHA6194-QXG - 37-40GHz Power Amplifier

Datasheet Summary

Description

The CHA6194-QXG is a four stage monolithic GaAs high power circuit producing 1.2 Watt output power.

It is highly linear with possible gain control and integrates a power detector.

ESD protections are included.

Features

Broadband performances: 37-40GHz.
31dBm saturated power.
38dBm OIP3.
20dB gain.
DC bias: Vd = 6.0Volt @ Id = 0.8A.
QFN5x6.
MSL3 Output power (dBm) Output power vs frequency 35 34 33 32 31 30 29 28 P1dB Psat 27 26 25 36 37 38 39 40 41 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 37 40 GHz 18 20 23.

Datasheet Details

Part number	CHA6194-QXG
Manufacturer	United Monolithic Semiconductors
File Size	477.56 KB
Description	37-40GHz Power Amplifier
Datasheet	CHA6194-QXG Datasheet
Additional preview pages of the CHA6194-QXG datasheet.

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Full PDF Text Transcription

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CHA6194-QXG 37- 40GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6194-QXG is a four stage monolithic GaAs high power circuit producing 1.2 Watt output power. It is highly linear with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio or K-band Sat-Com application. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package. 36 lead 6x5 mm QFN package Main Features ■ Broadband performances: 37-40GHz ■ 31dBm saturated power ■ 38dBm OIP3 ■ 20dB gain ■ DC bias: Vd = 6.0Volt @ Id = 0.

Published: Nov 28, 2016 |