• Part: CHA6358-99F
  • Description: 27-31.5GHz High Power Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 287.44 KB
Download CHA6358-99F Datasheet PDF
United Monolithic Semiconductors
CHA6358-99F
CHA6358-99F is 27-31.5GHz High Power Amplifier manufactured by United Monolithic Semiconductors.
27-31.5GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6358-99F is a three stages monolithic HPA that typically provides an output power of 31dBm at 1dB gain pression associated to a high IP3 output of 38.5dBm. It is designed for a wide range of applications, from professional to mercial munication systems The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is available in chip form. Vg1a Vd1a Vg2a Vd2a Vg3a Vd3a RF in RF out Vg1b Vd1b Vg2b Vd2b Vg3b Vd3b Main Features Output power (dBm) - Broadband performances: 27-31.5GHz - Pout: 31dBm at 1dB pression - OIP3: 38.5dBm - Linear gain: 22dB - DC bias: Vd=6.0Volt@Id=7...