CHA6362-QXG Datasheet 17.7 - 19.7ghz Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA6362-QXG 17.7 - 19.7GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless.

Datasheet Details

Part number	CHA6362-QXG
Manufacturer	United Monolithic Semiconductors
File Size	800.38 KB
Description	17.7 - 19.7GHz Power Amplifier
Datasheet	CHA6362-QXG-UnitedMonolithicSemiconductors.pdf

The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power.

It integrates a power detector and allows gain control.

ESD protections are included.

Frequency range: 17.7- 19.7GHz.
34.5dBm saturated power.
42dBm OIP3.
22dB gain.
DC bias: Vd = 6.0Volt @ Id = 1.34A.
QFN5x6.
MSL3 Power (dBm) & PAE (%) Power & PAE 36 34 32 30 Psat P1dB PAE sat 28 26 24 22 20 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 17.7 19.7 GHz.