CHA6362-QXG Datasheet PDF - United Monolithic Semiconductors 17.7 - 19.7GHz Power Amplifier Specs

CHA6362-QXG - 17.7 - 19.7GHz Power Amplifier

Datasheet Summary

Description

The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power.

It integrates a power detector and allows gain control.

ESD protections are included.

Features

Frequency range: 17.7- 19.7GHz.
34.5dBm saturated power.
42dBm OIP3.
22dB gain.
DC bias: Vd = 6.0Volt @ Id = 1.34A.
QFN5x6.
MSL3 Power (dBm) & PAE (%) Power & PAE 36 34 32 30 Psat P1dB PAE sat 28 26 24 22 20 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 17.7 19.7 GHz.

Datasheet Details

Part number	CHA6362-QXG
Manufacturer	United Monolithic Semiconductors
File Size	800.38 KB
Description	17.7 - 19.7GHz Power Amplifier
Datasheet	CHA6362-QXG Datasheet
Additional preview pages of the CHA6362-QXG datasheet.

📁 Similar Datasheet

CHA611 - low noise high accuracy linear Hall effect-based sensor (Cosemitech)

CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)

Full PDF Text Transcription

Click to expand full text

CHA6362-QXG 17.7 - 19.7GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power. It integrates a power detector and allows gain control. ESD protections are included. It is designed for Point To Point Radio or K-band Sat- Com application. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package. Main Features ■ Frequency range: 17.7- 19.7GHz ■ 34.5dBm saturated power ■ 42dBm OIP3 ■ 22dB gain ■ DC bias: Vd = 6.0Volt @ Id = 1.34A ■ QFN5x6 ■ MSL3 Power (dBm) & PAE (%) Power & PAE 36 34 32 30 Psat P1dB PAE sat 28 26 24 22 20 17 17.5 18 18.5 19 19.5 20 20.

Published: Nov 28, 2016 |