CHA6362-QXG Datasheet | United Monolithic Semiconductors

- 19.7GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power. It integrates a power detector and allows gain control. ESD protections are included. It is designed for Point To Point Radio or K-band Sat- application. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS pliant SMD package. Main Features - Frequency range: 17.7- 19.7GHz - 34.5dBm saturated power - 42dBm OIP3 - 22dB gain - DC bias: Vd = 6.0Volt @ Id = 1.34A - QFN5x6 - MSL3 Power (dBm) & PAE (%) Power & PAE 30 Psat P1dB...