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CHA6664-QDG - 12-16GHz 1W High Power Amplifier

General Description

The CHA6664-QDG is a three-stages Ku-band high power amplifier.

The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in RoHS compliant SMD package.

Key Features

  • 35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB).
  • 0.25 µm Power pHEMT Technology.
  • 12-16 GHz Frequency Range.
  • 31.5 dBm Saturated Output Power.
  • High gain: 28dB.
  • Quiescent Bias Point: 8V, 600mA.
  • 24L-QFN4x4 SMD package 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Frequency (GHz) dB(S21) dB(S11) dB(S22) Typical on board measurements Main Characteristics Tamb = +25° C, Vd1=Vd2=Vd3=+8V, I.

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Datasheet Details

Part number CHA6664-QDG
Manufacturer United Monolithic Semiconductors
File Size 347.20 KB
Description 12-16GHz 1W High Power Amplifier
Datasheet download datasheet CHA6664-QDG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6664-QDG RoHS COMPLIANT 12-16GHz 1W High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6664-QDG is a three-stages Ku-band high power amplifier. The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features 35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB) ■ 0.25 µm Power pHEMT Technology ■ 12-16 GHz Frequency Range ■ 31.