Datasheet Summary
RoHS PLIANT
12-16GHz 1W High Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package Description
The CHA6664-QDG is a three-stages Ku-band high power amplifier. The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS pliant SMD package.
Main Features
35 dB(S21), dB(S11), dB(S22) versus frequency (GHz)
S21, S11, S22 (dB)
- 0.25 µm Power pHEMT Technology
- 12-16 GHz Frequency Range
- 31.5 dBm Saturated Output Power
- High gain: 28dB
- Quiescent Bias Point: 8V, 600mA
- 24L-QFN4x4 SMD package
30 25 20 15 10 5 0 -5 -10 -15 -20...