CHA6664-QDG Description
The CHA6664-QDG is a three-stages Ku-band high power amplifier. The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHA6664-QDG Key Features
- 0.25 µm Power pHEMT Technology
- 12-16 GHz Frequency Range
- 31.5 dBm Saturated Output Power
- High gain: 28dB
- Quiescent Bias Point: 8V, 600mA
- 24L-QFN4x4 SMD package
- 28 Nov 06
- Fax: +33 (0) 1 69 33 03 09
- 16GHz) Linear gain variation versus temperature Input return loss ( 12
- 16GHz) Output return loss Output power at 1dB gain pression Saturated Output power Power Added Effciency in saturation P