Datasheet4U Logo Datasheet4U.com

CHA6664-QDG - 12-16GHz 1W High Power Amplifier

Datasheet Summary

Description

The CHA6664-QDG is a three-stages Ku-band high power amplifier.

The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in RoHS compliant SMD package.

Features

  • 35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB).
  • 0.25 µm Power pHEMT Technology.
  • 12-16 GHz Frequency Range.
  • 31.5 dBm Saturated Output Power.
  • High gain: 28dB.
  • Quiescent Bias Point: 8V, 600mA.
  • 24L-QFN4x4 SMD package 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Frequency (GHz) dB(S21) dB(S11) dB(S22) Typical on board measurements Main Characteristics Tamb = +25° C, Vd1=Vd2=Vd3=+8V, I.

📥 Download Datasheet

Datasheet preview – CHA6664-QDG

Datasheet Details

Part number CHA6664-QDG
Manufacturer United Monolithic Semiconductors
File Size 347.20 KB
Description 12-16GHz 1W High Power Amplifier
Datasheet download datasheet CHA6664-QDG Datasheet
Additional preview pages of the CHA6664-QDG datasheet.

📁 Similar Datasheet

  • CHA611 - low noise high accuracy linear Hall effect-based sensor (Cosemitech)
  • CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHA6664-QDG RoHS COMPLIANT 12-16GHz 1W High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6664-QDG is a three-stages Ku-band high power amplifier. The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features 35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB) ■ 0.25 µm Power pHEMT Technology ■ 12-16 GHz Frequency Range ■ 31.
Published: |