VS30P39AE Datasheet | Vanguard Semiconductor

-30V/-39A P-Channel Advanced Power MOSFET Features - Low On-Resistance - Fast Switching - 100% Avalanche Tested - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, RoHS pliant Description VS30P39AE designed by the trench processing techniques to achieve extremely low on-resistance. Additional Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply...