Datasheet4U Logo Datasheet4U.com

VS30P60AI - P-Channel Advanced Power MOSFET

General Description

VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

  • Low On-Resistance,5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number VS30P60AI
Manufacturer Vanguard Semiconductor
File Size 269.65 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS30P60AI Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VS30P60AI VS30P60AD -30V/-60A P-Channel Advanced Power MOSFET Features Low On-Resistance,5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.