VS30P39AP Datasheet | Vanguard Semiconductor

-30V/-39A P-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Description VS30P39AP designed by the trench processing techniques to achieve extremely low on-resistance. Additional Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. V DS R DS(on),typ @ VGS= -10V ID -30 V 9 mΩ -39...