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VS30P39AP
-30V/-39A P-Channel Advanced Power MOSFET
Features
Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
Description
VS30P39AP designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications.
V DS R DS(on),typ @ VGS= -10V ID
-30 V 9 mΩ -39 A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
VS30P39AP Datasheet
