Datasheet4U Logo Datasheet4U.com

VS30P60AD - P-Channel Advanced Power MOSFET

Download the VS30P60AD datasheet PDF. This datasheet also covers the VS30P60AI variant, as both devices belong to the same p-channel advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

  • Low On-Resistance，5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS30P60AI-VanguardSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VS30P60AD
Manufacturer Vanguard Semiconductor
File Size 269.65 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS30P60AD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS3000 Transmitter/Receiver Valens
VS3000A0S Transmitter/Receiver Valens
VS3000A0SESB Transmitter/Receiver Valens
VS300R HDBaseT Transmitter/Receiver Valens
VS300RA0S HDBaseT Transmitter/Receiver Valens

Other Datasheets by Vanguard Semiconductor

Part Number Description
VS30P60AI P-Channel Advanced Power MOSFET
VS30P39AE P-Channel Advanced Power MOSFET
VS30P39AP P-Channel Advanced Power MOSFET
VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET
VS30150AD N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VS30P60AI VS30P60AD -30V/-60A P-Channel Advanced Power MOSFET Features Low On-Resistance，5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.