Datasheet4U Logo Datasheet4U.com

VS3622DP - Dual N-Channel Advanced Power MOSFET

Key Features

  • Dual N-Channel，5V Logic Level Control.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant.
  • VS3622DP 30V/40A Dual N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 30 V 8.7 mΩ 12 mΩ 40 A PDFN5x6 Part ID VS3622DP Package Type PDFN5x6 Marking 3622DP Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless other.

📥 Download Datasheet

Datasheet Details

Part number VS3622DP
Manufacturer Vanguard Semiconductor
File Size 544.92 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3622DP Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS3622DP Dual N-Channel 30V MOSFET VBsemi
VS3622AD N-Channel 30V MOSFET VBsemi
VS3606AP N-Channel 30V MOSFET VBsemi
VS3610AE N-Channel 30V MOSFET VBsemi
VS3614GE 30V/31A N-Channel Advanced Power MOSFET Vergiga

Other Datasheets by Vanguard Semiconductor

Part Number Description
VS3622DP2 Dual N-Channel Advanced Power MOSFET
VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET
VS3622DS Dual N-Channel Advanced Power MOSFET
VS3622AA N-Channel Advanced Power MOSFET
VS3622AD N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VS3622DP 30V/40A Dual N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 30 V 8.