VS3622DP2 Datasheet | Vanguard Semiconductor

Features - Dual N-Channel，5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching and High efficiency - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant - VS3622DP2 30V/42A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 7.5 mΩ 11 mΩ 42 A PDFN5x6 Part ID VS3622DP2 Package Type PDFN5x6 Marking 3622DP2 Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Body-Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Avalanche energy, single pulsed ② PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RJC Thermal...