VS3622DS
Features
- Dual N-Channel，5V Logic Level Control
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- High Effective
- Pb-free lead plating; Ro HS pliant
- VS3622DS
30V/12A Dual N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
30 10 14 12
SOP8
V mΩ mΩ A
Part ID VS3622DS
Package Type SOP8
Marking 3622DS
Tape and reel information 3000pcs/reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current @VGS=10V
IDM EAS PD VGS
Pulse drain current tested ① Avalanche energy, single pulsed ②
Maximum power dissipation Gate-Source voltage
TA =25°C TA =25°C TA =100°C TA =25°C
TA =25°C
TSTG , TJ Storage and junction temperature range
Thermal Characteristics
Symbol
Parameter
RθJL R JA
Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient
Rating
30...
