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VS3622DS - Dual N-Channel Advanced Power MOSFET

Key Features

  • Dual N-Channel，5V Logic Level Control.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • High Effective.
  • Pb-free lead plating; RoHS compliant.
  • VS3622DS 30V/12A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 10 14 12 SOP8 V mΩ mΩ A Part ID VS3622DS Package Type SOP8 Marking 3622DS Tape and reel information 3000pcs/reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)D.

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Datasheet Details

Part number VS3622DS
Manufacturer Vanguard Semiconductor
File Size 630.35 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3622DS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  High Effective  Pb-free lead plating; RoHS compliant  VS3622DS 30V/12A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.