VSM030P10MS Datasheet | Vanguard Semiconductor

Features - P-Channel，-5V Logic level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=-4.5 V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant -100V/-55A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -100 25 28 -55 V mΩ mΩ A TO-263 Part ID VSM030P10MS Package Type TO-263 Marking 030P10M Tape and reel information 800pcs/Reel Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VGS V(BR)DSS TSTG Gate-Source Voltage Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested ① ID Continuous Drain current@VGS=10V PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient(ts<10s) Drain-Source Avalanche Ratings Avalanche Energy,...