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Si2335DS
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–12
rDS(on) (W)
0.051 @ VGS = –4.5 V 0.070 @ VGS = –2.5 V 0.106 @ VGS = –1.8 V
ID (A)
–4.0 –3.5 –3.0
TO-236 (SOT-23)
G 1 3 S 2 D
Top View Si2335DS (E5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS
5 sec
–12 $8 –4.0 –3.3 –15
Steady State
Unit
V
–3.2 –2.6 A
–1.6 1.25 0.75 0.48 –55 to 150 W _C
PD TJ, Tstg
0.
SI2335DS Datasheet
