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Si9434DY
Siliconix
P-Channel Enhancement-Mode MOSFET
PRODUCT SUMMARY
VDS (V) –20 RDS(ON) (W) 0.040 @ VGS = –4.5 V 0.060 @ VGS = –2.5 V ID (A) "6.4 "5.1
Recommended upgrade: Si9424DY
S S S
SO-8
S S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A Pulsed Drain Current Continuous Source Current (Diode Conduction)A Maximum Power Dissipation Dissi ationA Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IS PD TJ, Tstg LIMIT –20 "8 "6.4 "5.1 "10 –2.5 2.5 W 1.6 –55 to 150 _C A V UNIT
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-AmbientA Notes A.