SIHFZ44L Datasheet | Vishay

FEATURES - Advanced process technology - Surface-mount (IRFZ44S, Si HFZ44S) - Low-profile through-hole (IRFZ44L, Si HFZ44L) - 175 °C operating temperature Available - Fast switching - Material categorization: for definitions of pliance please see .vishay./doc?99912 Available Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration 60 VGS = 10 V 67 18 25 Single ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) Si HFZ44S-GE3 IRFZ44SPb F DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface-mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFZ44L, Si HFZ44L) is available for low profile applications. D2PAK (TO-263) Si HFZ44STRR-GE3a - D2PAK (TO-263) Si HFZ44STRL-GE3a IRFZ44STRLPb Fa I2PAK (TO-262) SIHFZ44L-GE3 IRFZ44LPb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltagef Gate-Source Voltagef Continuous Drain Currente Continuous Drain Current VGS at 10 V TC = 25 °C TC =...