SIHFZ48 Datasheet | Vishay

FEATURES 60 0.018 - - - - - - - - Dynamic d V/dt Rating Repetitive Avalanche Rated Ultra Low On-Resistance Very Low Thermal Resistance 175 °C Operating Temperature Fast Switching Ease of Paralleling Lead (Pb)-free Available Available Ro HS- PLIANT TO-220 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRFZ48Pb F Si HFZ48-E3 IRFZ48 Si HFZ48 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT 60 ± 20 50 50 290 1.3 100 50 19 190 4.5 - 55 to + 175 300 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 22 µH, RG = 25 Ω IAS = 72 A (see fig. 12). c. ISD ≤ 72 A, d V/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case e. Current limited by the package, (die current = 72 A). - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91294 S-Pending-Rev. A, 23-Jul-08 .vishay. 1 IRFZ48, Si HFZ48 Vishay Siliconix THERMAL RESISTANCE...